| 摘要 |
PROBLEM TO BE SOLVED: To obtain a p-channel MOS transistor having an operating speed enhanced by applying a stress in which the operating speed is enhanced furthermore without increasing the cost. SOLUTION: In the p-channel MOS transistor having a gate electrode formed on a silicon substrate through a gate insulation film in correspondence with a channel region and carrying respective sidewall insulation films on the opposite sidewall faces, and p-type source and drain regions formed on the outside of the sidewall insulation film in the substrate, the source and drain regions are formed to include a p-type polycrystalline region and compressive stress is accumulated in the polycrystalline region. COPYRIGHT: (C)2006,JPO&NCIPI
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