发明名称 METHOD FOR MANUFACTURING FILM
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method for a high-density diamond-like carbon film, silicon film, germanium film, etc. SOLUTION: The method for manufacturing the film comprises forming the film on a base material by performing plasma discharge with respect to a mixed system of a compound including a group 14 element and a substance made into a supercritical state. Here, the group 14 element is carbon, and the formed film is preferably a diamond-like carbon film. Also, the group 14 element is silicon and the formed film is preferably a silicon film. Further, the group 14 element is a germanium atom and the formed film is preferably a germanium film. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006249566(A) 申请公布日期 2006.09.21
申请号 JP20050072030 申请日期 2005.03.14
申请人 TOKYO UNIV OF AGRICULTURE & TECHNOLOGY 发明人 WATANABE TOSHIYUKI;SONE MASATO;SUGA YOSUKE
分类号 C23C16/50;C23C16/24;C23C16/26;C23C16/28;H01L21/205;H01L21/768;H01L23/522 主分类号 C23C16/50
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