发明名称 Method of manufacturing domain inverted crystal
摘要 A first electrode is partially contacted with a domain to be polarization-inverted 2 on one plate face of a nonlinear optical crystal substrate 1 , a second electrode is contacted with the other plate face of the substrate, and a polarization inversion voltage is applied between the both electrodes. At this time, the electrode is so formed that the contact area of the first electrode 3 with the plate face satisfies particular conditions, and the domain to be polarization-inverted is entirely or partially polarization-inverted by the application of a polarization inversion voltage. The aforementioned particular conditions are that each contact area 3 is dot-like so that plural contact areas 3 can be present independently within individual domains to be polarization-inverted 2 , and individual dot-like contact areas have an area of 0.00785 mum <SUP>2</SUP>-7850 mum<SUP>2 </SUP>and a shape included in a circle having a diameter of 100 mum. As a result, a polarization inverted crystal having high quality can be obtained more easily.
申请公布号 US2006207496(A1) 申请公布日期 2006.09.21
申请号 US20050548653 申请日期 2005.09.13
申请人 KOTO MASAHIRO;TANIGUCHI HIROKAZU;MAEDA SHIGEO 发明人 KOTO MASAHIRO;TANIGUCHI HIROKAZU;MAEDA SHIGEO
分类号 C30B1/00;C30B3/00;C30B5/00;C30B28/02;G02F1/355 主分类号 C30B1/00
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