| 摘要 |
An infrared sensor includes an imaging area including a thermal non-sensitivity pixel row, an optical non-sensitivity pixel row and a valid pixel row, and the infrared sensor including a column amplifier including a first amplifying transistor, a first clamp circuit, an integration capacitor, and a resetting part connected to the drain of the first amplifying transistor and a storage node of the integration capacitor, the column amplifier being connected to the signal lines, and amplifying a signal voltage generated in the signal line; a column buffer including a driving transistor, a drain of the driving transistor being connected to a source of the first amplifying transistor; a readout circuit connected to the storage node of the integration capacitor; and a signal generating circuit including a circuit configuration equivalent to that of the column amplifier and including a second amplifying transistor equivalent to the first amplifying transistor, a gate of the second amplifying transistor connected to a gate of the driving transistor.
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