| 摘要 |
Provided are a method of manufacturing a polysilicon thin film transistor plate, which includes leveling the surface of crystallized polysilicon having protruding grains at grain boundaries to improve the electrical characteristics of an active layer, and a liquid crystal display including a polysilicon thin film transistor plate manufactured by the method. The method of manufacturing a polysilicon thin film transistor plate includes loading a substrate on which polysilicon grains are formed, removing protruding grains at grain boundaries among the polysilicon grains by chemical mechanical polishing ("CMP") and forming a polished substrate, cleaning the polished substrate and forming a cleaned substrate, and unloading the cleaned substrate. |
