PATTERN FORMING METHOD

摘要

PROBLEM TO BE SOLVED: To reduce a size of an opening portion without deteriorating a shape of the opening portion consisting of a hole or a groove formed on a resist pattern.

SOLUTION: A resist film 11 composed of a chemically amplified resist material having: a base polymer containing a protecting group which is removed by the action of an acid; an acrylic compound; and an acid generator which generates an acid on light irradiation is formed. Pattern exposure is conducted by making exposure light 12 irradiate the resist film 11 via a mask 13. The resist pattern 16 having the opening portion 15 consisting of the hole or the groove is formed by developing the pattern exposed resist film 11. The size of the opening portion 15 is reduced by making light irradiate the resist pattern 16 under heating.

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