| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a growing method of a light emitting diode epitaxial wafer, with which film thickness of a light emitting layer can be made thin without being restricted by a light emitting layer material such as an Al amount, an absorption amount of light can be reduced in the light emitting layer of reflected light, and luminance is increased. <P>SOLUTION: In the growing method of the light emitting diode epitaxial wafer where a Bragg reflection layer 2 which consists of a plurality of semiconductor layers different in refractive indexes, a light emitter formed of an n-type cladding layer 3, a light emitting layer 4, and a p-type cladding layer 5 and a current dispersion layer 6, are laminated in order on a conductive substrate 1 by using a vapor phase growing method. The distortion amount of the substrate with respect to a crystal lattice in the light emitting layer 4 formed of (Al<SB>x</SB>Ga<SB>1-x</SB>)<SB>y</SB>In<SB>1-y</SB>P (0≤x≤1 and 0<y≤1) is set to be about -1.0%, and the light emitting layer 4 is thinly grown up. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
