| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor photodetector which can obtain high selectivity without requiring a wavelength filter and selectively receive light of a short wavelength. <P>SOLUTION: A transmitted light absorption recombination layer 2, a barrier layer 3, a wavelength selection absorption layer 4, and an InP window layer 7 wherein a p-type diffusion layer region 8 is formed, are formed in this order on an n-type InP substrate 1. After light of wavelength of 1.3 μm transmits the InP window layer 7, it is absorbed in the wavelength selection absorption layer 4 and picked up as a current signal. Meanwhile, after light of wavelength of 1.55 μm transmits the wavelength selection absorption layer 4, it gets to the transmitted light absorption recombination layer 2 via the barrier layer 3. It is then absorbed by the transmitted light absorption recombination layer 2 and is recombined and disappears after generating electron and hole. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
