| 摘要 |
An aspect of the present invention provides a photovoltaic device having a first semiconductor layer of a first conduction type and a third semiconductor layer of a second conductivity type. At least one of the first and third semiconductor layers includes an amorphous semiconductor layer. The amorphous semiconductor layer has a larger band gap than a non-monocrystal semiconductor layer having crystallinity. Accordingly, it is possible to increase a built-in electric field that is a potential difference between the Fermi level of the first semiconductor layer of the first conductivity type and the Fermi level of the third semiconductor layer of the second conductivity type.
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