| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface-emitting semiconductor laser device with high efficiency and reliability in which sufficiently satisfying current constriction is achieved, and high external differential quantum efficiency is obtained with low threshold current. SOLUTION: A surface-emitting semiconductor device has: insulation layers 107 and 108 embedding separation grooves for partially separating a waveguide path in an optical resonator formed by a pair of reflecting mirrors, namely a distributed reflection type multilayer film mirror 104 and a dielectric multilayer film mirror 11; and a quantum well active layer 105. In the surface-emitting semiconductor device, if oscillation wavelength of an end surface-emitting semiconductor laser device which has the same semiconductor layer as that constituting the optical resonator is madeλ<SB>G</SB>, the oscillation wavelengthλ<SB>G</SB>is set at a short wavelength side by a difference in specified wavelength (the amount of gain offset)▵λ<SB>EM</SB>to a desired oscillation wavelengthλ<SB>EM</SB>. COPYRIGHT: (C)2006,JPO&NCIPI
|
