| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor having 3C-SiC single crystal thin film with a surface of reduced irregularity and curvature as well as excellent crystalline and high quality surface orientation (111), and a SiC semiconductor capable of forming 3C-SiC single crystal thin film with surface orientation (111) on an Si single crystal substrate surely and easily by reducing lattice mismatching and preventing etching. SOLUTION: The SiC semiconductor is fabricated in a method to carry out vapor phase epitaxy of the 3C-SiC low temperature growth layer 2 including hydrogen with a volume of 10<SP>19</SP>atoms/cm<SP>3</SP>or more under a condition of reduced pressure atmosphere of 300 Torr or less and a temperature range of 780 to 950°C using organic compound gas on the Si single crystal substrate 1 with surface orientation (110), then form the 3C-SiC single crystal layer 3 with surface orientation (111) on the layer 2. COPYRIGHT: (C)2006,JPO&NCIPI
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