| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with a transistor mounted on a semiconductor substrate, and to provide its manufacturing method. SOLUTION: In the semiconductor device with the transistor mounted on the semiconductor substrate 211, the transistor comprises an n-type epitaxial layer 212 composing a base region, an n-type buried layer formed under the n-type epitaxial layer, a first p-type buried layer formed on the n-type buried layer and composing a collector region, a second p-type buried layer formed independently on the first p-type buried layer on the n-type buried layer and composing an emitter region, a first p-type diffusion layer formed so as to form a joint from the surface part of the n-type epitaxial layer to the first p-type buried layer and composing a collector region together with the first p-type buried layer, and a second p-type diffusion layer formed so as to form a joint from the surface part of the n-type epitaxial layer to the second p-type buried layer and composing the emitter region together with the second p-type buried layer. COPYRIGHT: (C)2006,JPO&NCIPI
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