| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of forming a metal film to serve as a back electrode on a semiconductor substrate while satisfying all of adhesion, electric resistance characteristics and flexural strength characteristics. SOLUTION: The method is for manufacturing a semiconductor device by forming a device layer on one of surfaces of a semiconductor substrate, and forming a back electrode on the backside. The method includes, prior to a film forming step of forming a metallized layer 5 to serve as the back electrode, steps of mechanically grinding the backside 1b to roughen the surface into an uneven surface having valleys (a) and peaks (b), removing a machined and altered layer 1c generated by the mechanical grinding through first plasma etching processing from the roughened surface by using a plasma generating gas mainly containing argon gas, and also enlarging the valleys (a) and the peaks (b) to increase surface roughness. COPYRIGHT: (C)2006,JPO&NCIPI
|
