| 摘要 |
PROBLEM TO BE SOLVED: To provide a laminated solid state image sensor for imaging with high picture quality by suppressing dark currents. SOLUTION: A solid state image sensor 100 comprises photoelectric conversion films 15, 19, and 23 laminated above a semiconductor substrate. It comprises an n<SP>+</SP>-region 3 which is electrically connected to the photoelectric conversion film 15 and is, provided as an n-type impurity region on the surface of an n-type semiconductor substrate 1 in which signal charges generated by the photoelectric conversion film 15 are accumulated, an n region 9 which is provided under the n<SP>+</SP>-region 3 and is an n-type impurity region of concentration lower than the n<SP>+</SP>-region 3 to accumulate signal charges accumulated in the n<SP>+</SP>-region 3, a signal charge reading region (the region overlapping with a transfer electrode 11 of a p well layer 2) for reading signal charges accumulated in the n region 9, and the p-type impurity region 8 of the p-type impurity region provided on the surface of the n-type semiconductor substrate 1 between the n<SP>+</SP>-region 3 and the signal charge reading region. COPYRIGHT: (C)2006,JPO&NCIPI
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