| 摘要 |
PROBLEM TO BE SOLVED: To read out signal charge accumulated in an embedded photodiode 13 as much as possible in a CMOS sensor including a photoelectric converter and a signal scanning circuit wherein a plurality of pixels are arranged in two dimensional manner. SOLUTION: For example, an embedded photodiode 13, a signal detector 14 and a signal scanning circuit 15 are formed on the surface of a p-type substrate 11. In addition, a gate electrode 21 for reading is provided on the surface of the p-type substrate 11 in a manner that at least a part thereof may be close to the periphery of an image formation area 13b is constant wherein a distance from the central part 13a of the embedded photodiode 13. COPYRIGHT: (C)2006,JPO&NCIPI
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