| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique for improving reliability of a semiconductor device using an SiOC film as an interlayer film. SOLUTION: The interlayer film is formed of an SiOC film in which a bonding ratio between an Si-CH<SB>3</SB>bond and an Si-O bond is <2.50%. Alternatively, the interlayer film is formed of an SiOC film in which a strength ratio of an Si-OH bond to an SiO-O bond exceeds 0.0007, a strength ratio of an Si-H bond to the SiO-O bond in a wavelength of 2,230 cm<SP>-1</SP>exceeds 0.0050, and a strength ratio of an Si-H bond to the SiO-O bond in a wavelength of 2,170 cm<SP>-1</SP>exceeds 0.0067. Consequently, it is possible to improve mechanical strength of the interlayer film by setting specific permittivity of the interlayer film to≤3, and also, by suppressing the degradation of hardness or an elastic modulus. COPYRIGHT: (C)2006,JPO&NCIPI
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