| 摘要 |
A metal suicide layer is formed on silicon-containing features of a substrate in a chamber. A metal film is sputter deposited on the substrate and a portion of the sputter deposited metal film is silicided. In the process, sputtering gas is energized by applying an electrical bias potential across the metal sputtering target and the substrate support to sputter deposit metal from a target onto the substrate. At least a portion of the deposited sputtered metal is silicided by heating the substrate to a silicidation temperature exceeding about 200° C. to form a combined sputtered metal and metal silicide layer on the substrate. The remaining sputtered metal can be silicided by maintaining the substrate at the silicidation temperature to form the metal silicide layer.
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