发明名称 |
Method for producing a buried semiconductor layer |
摘要 |
A method for producing a region of increased doping in an n-doped semiconductor layer which is buried in a semiconductor body of a vertical power transistor and which is arranged between a p-doped body region facing the front side contact of the power transistor and an n-doped substrate facing the rear side contact of the power transistor has the following steps: a) irradiation of at least one part of the surface of the semiconductor body with protons, and b) heat treatment of the semiconductor body.
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申请公布号 |
US2006211189(A1) |
申请公布日期 |
2006.09.21 |
申请号 |
US20060364882 |
申请日期 |
2006.02.28 |
申请人 |
INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
SIEMIENIEC RALF;SCHULZE HANS-JOACHIM;HIRLER FRANZ |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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