发明名称 |
Semiconductor device, and method of fabricating the same |
摘要 |
A multi-layered gate electrode of a crystalline TFT is constructed as a clad structure formed by deposition of a first gate electrode, a second gate electrode and a third gate electrode, to thereby to enhance the thermal resistance of the gate electrode. Additionally, an n-channel TFT is formed by selective doping to form a low-concentration impunty region which adjoins a channel forming region, and a sub-region overlapped by the gate electrode and a sub-region not overlapped by the gate electrode, to also mitigate a high electric field near the drain of the TFT and to simultaneously prevent the OFF current of the TFT from increasing.
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申请公布号 |
US2006208258(A1) |
申请公布日期 |
2006.09.21 |
申请号 |
US20060438295 |
申请日期 |
2006.05.23 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI |
分类号 |
H01L29/76;G02F1/1368;H01L21/28;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/423;H01L29/49;H01L29/786 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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