发明名称 |
ABRASIVE FOR SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, METHOD FOR POLISHING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE MANUFACTURING METHOD |
摘要 |
<p>A polishing technology by which a suitable polishing speed rate can be obtained between a polysilicon film and other materials and high planarity of a plane to be polished, including the polysilicon film, can be achieved in the case of polishing the plane to be polished in semiconductor integrated circuit device manufacture. An abrasive which contains cerium oxide particles, water soluble polyamine and water and has a pH within a range of 10-13 is used as an abrasive for chemical mechanical polishing.</p> |
申请公布号 |
WO2006098141(A1) |
申请公布日期 |
2006.09.21 |
申请号 |
WO2006JP303647 |
申请日期 |
2006.02.27 |
申请人 |
ASAHI GLASS COMPANY, LIMITED;SEIMI CHEMICAL CO., LTD.;YOSHIDA, IORI;KON, YOSHINORI |
发明人 |
YOSHIDA, IORI;KON, YOSHINORI |
分类号 |
H01L21/304;B24B37/04;C09K3/14 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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