MAGNETIC SENSOR AND MANUFACTURING METHOD THEREOF

摘要

A plurality of gigantic magnetic reluctance elements are arranged ona single semiconductor substrate, there by providing a small-size magnetic sensor for detecting magnetic field intensity in three-axis directions. A thick film is formed on the semiconductor substrate. On its flat surface, a gigantic magnetic reluctance element constituting an X-axis sensor and Y-axis sensor is arranged. On the other hand, the gigantic magnetic reluctance element constituting the Z-axis sensor is formed by using the inclined surface of a plurality of grooves formed in the thick film. The grooves may be formed by using the reactive ion etching or the high-density plasma CVD method. Moreover, an insulation film is formed between the thick film and a passivation film so as to be used as an etching stopper. Each of the grooves has a first inclined surface and a second inclined surface. A magneto-sensitive portion may be formed on the second inclined surface having a greater inclination angle. In order to adjust the inclined surface shape and inclination degree, it is possible to form a dummy inclination surface not directly relating to the formation of the gigantic magnetic reluctance element.