| 摘要 |
PROBLEM TO BE SOLVED: To form a contact hole that does not need a mask with a comparatively large film thickness, and can well imbed wiring materials while preventing a substantial recess of a layer formed beneath the layer to be etched. SOLUTION: For the structure of a ferroelectric capacitor 1 whose capacitor 1a formed on a substrate 10 is covered by a cover film 14 and an interlayer insulation film 15, the interlayer insulation film 15 is first etched to form a contact hole 16a running through it, and then, the cover film 14 exposed by the contact hole 16a is wet-etched to form a contact hole 26b up to the upper electrode 13. After that, the interlayer insulation film 15 may be etched again to form a contact hole 26a that has a broader aperture diameter than that of the contact hole 26b. COPYRIGHT: (C)2006,JPO&NCIPI
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