| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method capable of improving the patterning accuracy of charge transferring electrodes, in a solid-state imaging element having the charge transferring electrodes of monolayer electrode structure. SOLUTION: The manufacturing method of the solid-state imaging element has a process for forming a second conductive film 3b on first electrodes 3a, a process for flattening the second conductive film 3b (Fig. (b)), a process for forming thereafter resist patterns R1 for masking the regions to be second electrodes 3b and for masking the dishing regions generated in the second conductive film 3b (Fig. (c)), a process for so etching thereafter selectively the second conductive film 3b by using the resist patterns R1 as masks and so removing the second conductive film 3b as to form the second electrodes 3b (Fig. (d)), and processes for removing thereafter the dishing regions by etching them. Consequently, the dishing regions are so not etched in the case of the etching performed in order to form the second electrodes 3b as to be able to perform the highly accurate patterning of the solid-state imaging element. COPYRIGHT: (C)2006,JPO&NCIPI
|
