| 摘要 |
PROBLEM TO BE SOLVED: To provide a forming method of a crystallized film and its apparatus wherein, substantially the same electrical characteristics of crystallized parts by exposure of a pattern of laser can be obtained, for example, electric characteristics of a TFT are made excellent when pulsed laser is exposed to a thin film material on a substrate to form a transverse growing part on the material. SOLUTION: The pattern 11 of the pulsed laser includes a rectangular bodies 11a and a protrusion 11b having an inclination length 12 inclining from a transverse direction. A longitudinal direction parallel to the boundary 13 of the body 11a is assumed to be Y, and a vertical transverse direction X. For a movement distance of the pattern 11 in a state where the boundaries 13 are parallel in the rear side bodies 11a in a scanning movement direction of a pattern 15 of laser exposed next with respect to a pattern 14 of laser exposed first, the movement distance in a direction Y is assumed as p and the movement distance in a direction X is q, the movement distance of the pattern satisfies p≥a and q≤l, where l is a transverse length from the boundary 13 of a crystallized part of the body 11a by the pattern 14 exposed first, and (a) is a longitudinal length of a crystallized part of the protrusion 11b by the pattern 14 exposed first on a line 16a. COPYRIGHT: (C)2006,JPO&NCIPI
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