SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND p-CHANNEL MOS TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To enhance operating speed of a p-channel MOS transistor. SOLUTION: An SiGe mixed crystal layer is formed epitaxially on the opposite sides of the channel region of a p-channel MOS transistor and a uniaxial compressive stress is generated in the channel region. The gate electrode is covered with a compressive stress film accumulating compressive stress through a gate sidewall insulation film and an in-plane compressive stress is further applied to the channel region. COPYRIGHT: (C)2006,JPO&NCIPI