| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a structure of MIM capacity which can secure a dry etching margin for a via hole to a top electrode and a bottom electrode, and also to provide its manufacturing method. SOLUTION: The semiconductor device includes a conductive film (bottom electrode) 101, and a capacitive insulation film 102, and the other conductive film (top electrode) 103 at least part of which is extended to a region where there is no bottom electrode 101 and which have total film thicknesses nearly the same as those of the bottom electrode 101. The semiconductor device also includes an interlayer insulation film 104 which covers the whole of the bottom electrode 101 and a capacitive insulation film 102, and has a contact plug 107 extended to the bottom electrode 101 existing in a region where there is no top electrode 103 above and a contact plug 108 extended to the top electrode 103 existing in a region where there is no bottom electrode 101 below. COPYRIGHT: (C)2006,JPO&NCIPI
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