| 摘要 |
PROBLEM TO BE SOLVED: To enlarge the area of a semiconductor layer being formed on an insulator without employing an SOI substrate. SOLUTION: After an embeded insulation film 10 is formed in a cavity 9 between a semiconductor substrate 1 and a second semiconductor layer 3 by thermally oxidizing the semiconductor substrate 1 and the second semiconductor layer 3 in the cavity 9 through an opening 7, a contact hole 26 for exposing the sidewall of source/drain layers 25a, 25b around the opening 7 are formed by patterning the embeded insulation films 10, 13 and the second semiconductor layer 3 exposed to the surface of the source/drain layers 25a, 25b, and then wiring layers 27a, 27b connected with the source/drain layers 25a, 25b, respectively, through a contact hole 26 are formed. COPYRIGHT: (C)2006,JPO&NCIPI
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