METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

摘要

A silicon film is formed on a gate insulating film (2) which is formed on the surface of a semiconductor substrate (1). A gallium-doped silicon film (10) is formed by doping the silicon film with gallium. The gallium-doped silicon film is subjected to a heat treatment, and a nickel film (12) is formed on the thus heat-treated gallium-doped silicon film. By performing sintering in a nitrogen atmosphere or a high vacuum, the gallium-doped silicon film provided with the nickel film is subjected to a nickel silicide formation reaction, thereby forming a gate electrode. When an MISFET comprising a silicide gate electrode is manufactured by the above-described method, the work function of the silicide gate electrode can be changed by a greater amount than the conventional ones. Consequently, an MISFET having high driving capability with low power consumption can be manufactured at low cost.