| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an SRAM cell in which a ROM region is mixed. <P>SOLUTION: The SRAM cell 1 has such structure that two gate FET Q11, Q12, two PchFET Q13, Q15, and two NchFET Q14, Q16 are cross-coupled to one another, the Pch FET Q13 is constituted of depletion type elements, other all FET Q11, Q12, Q14 to Q16 are constituted of enhancement type elements. Therefore, an output of the FET Q16 is fixed to an L level, finally, in the SRAM 1, the potential of the gate FET Q11 becomes L level potential, the potential of the cross-coupled gate FET Q12 of another one side is fixed to the potential of an H level, and is made to be a ROM. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
