| 摘要 |
PROBLEM TO BE SOLVED: To provide a trench element separation method, by which a trench can be embedded easily despite its simple manufacturing process. SOLUTION: A photoresist pattern 110 is formed on a surface of a bare silicon substrate 100. A trench T is formed by etching the substrate 100 up to a predetermined depth using the photoresist pattern 110 as an etching mask. Then, the photoresist pattern 110 is removed. After that, an insulating layer 130 is formed in the trench, and a CMP process is performed until the substrate 100 is exposed using slurry comprising cerium oxide abrasive powder. After the trench T is formed, a nitride liner is formed all over the result object, which may be used as a stopper of the CMP process. COPYRIGHT: (C)2006,JPO&NCIPI
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