| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a flash memory device which can improve charge retention characteristics of the flash memory device, and can prevent a smiling phenomenon of a tunnel oxide film and a dielectric film which are generated after a thermal treatment process of a source/drain region. SOLUTION: The disclosed method includes, in a flash memory device comprising a stack gate electrode, a step of performing a radical oxidization process on the entire resulting surface including the stack gate electrode to form a sidewall oxide film on sidewalls of the stack gate electrode, and to maintain the profile of the stack gate electrode before the radical oxidization process. COPYRIGHT: (C)2006,JPO&NCIPI
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