| 摘要 |
PROBLEM TO BE SOLVED: To provide a photoresist stripper composition having excellent striping property for a photoresist or a photoresist modified layer remaining after dry etching and causing no attack on a new wiring material, an interlayer insulating film material or the like in manufacturing processes of a semiconductor circuit device, and to provide a method for stripping a photoresist and a photoresist modified layer. SOLUTION: The photoresist stripper composition contains at least one kind in acetylene alcohol compounds and organic sulfonic acid compounds and at least one kind in polyhydric alcohols and their derivatives. COPYRIGHT: (C)2006,JPO&NCIPI |
