| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide ingot capable of preventing the occurrence of cracks at processing, and its manufacturing method. SOLUTION: A surface layer 12 is formed on at least the outer peripheral surface of a columnar silicon carbide single crystal 11. A compressive stress acting on the surface layer 12 itself generates a tensile stress that acts on the silicon carbide single crystal 11. Especially, the compressive stress that acts on the surface layer 12 itself is generated by a difference in the impurity concentration between the surface layer 12 and the silicon carbide single crystal 11, wherein the impurity is nitrogen and its concentration is lower in the surface layer 12 than in the silicon carbide single crystal 11. COPYRIGHT: (C)2006,JPO&NCIPI
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