发明名称 Plasma enhanced atomic layer deposition system and method
摘要 A method for depositing a film on a substrate using a plasma enhanced atomic layer deposition (PEALD) process includes disposing the substrate in a process chamber configured to facilitate the PEALD process, introducing a first process material within the process chamber and introducing a second process material within the process chamber. Electromagnetic power is coupled to the process chamber during introduction of the second process material in order to generate a plasma that facilitates a reduction reaction between the first and second process materials at a surface of the substrate, electromagnetic power is coupled to a gas injection electrode to generate a plasma that ionizes contaminants such that the ionized contaminants are attracted to a plurality of orifices in the gas injection electrode. The process chamber is vacuum pumped through the plurality of orifices to expel the ionized contaminants from the process chamber.
申请公布号 US2006210713(A1) 申请公布日期 2006.09.21
申请号 US20050084005 申请日期 2005.03.21
申请人 TOKYO ELECTRON LIMITED 发明人 BRCKA JOZEF
分类号 C23C16/00 主分类号 C23C16/00
代理机构 代理人
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