Data programming operation driving method for nonvolatile semiconductor memory device, involves excluding discharging operation of selected bitline before data verification process and after threshold voltage control process

摘要

The method involves controlling a threshold voltage of a selected memory cell to be programmed, based on a voltage level of a selected one of even and odd bitlines. The non-selected bitlines are discharged to a ground voltage. Data of the selected cell is verified. An operation for discharging the selected bitline is excluded before the data verification process and after the threshold voltage controlling process.