| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To increase a cell current ratio of a programmed state to an erased state of a two-bit storing type nonvolatile memory cell, and also to reduce power consumption. <P>SOLUTION: The programmed state is made a state in which electrons are injected into two local areas in the neighborhood of a drain and a source joining edge, and the erased state is made a state in which the electrons in the two local areas are neutralized or holes are injected therein, and a read bias is made a linear area. As regards the cell current in the programmed state, the injected charge at the source side can restrains electronic carriers necessary for forming a conductive channel from flowing therein, and the injected charge at the drain side can limit formation of the conductive channel near the drain side to restrain a cell current, and reduction in a read current, an improvement in the cell current ratio, and an improvement in a read operation margin are realized. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
