| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit apparatus and a manufacturing method thereof with insulation gate type field effect transistors capable of promoting their fining without damaging the reliability of its integrated circuit. SOLUTION: The semiconductor integrated circuit apparatus is provided with a plurality of insulation gate type field effect transistors TR. The field effect transistor has an element separating insulation film STI which is formed on the top surface of a semiconductor substrate 21 to protrude from the inside of the semiconductor substrate 21, and performs in the form of a matrix the partition of element regions in the semiconductor substrate 21; a gate insulation film 31 formed on each element region; a gate electrode 32 provided on each gate insulation film; source/drain regions S/D provided in the semiconductor substrate positioned on both sides of each gate electrode; a insulation film 34 formed on each gate electrode; and contact wiring 35 piercing each insulation film to contact with each gate electrode. Hereupon, two side walls opposite to each other which belong to side walls of each gate electrode are so contacted with the element separating insulation film that the gate width of each gate electrode is specified by the element separating insulation film. COPYRIGHT: (C)2006,JPO&NCIPI
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