| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing method and device for suppressing the excess generation of dilution heat at the time of mixing SPM chemical and the fluctuation of a chemical volume and chemical rate, and for carrying out SPM peeling treatment of a treated film with satisfactory stability. SOLUTION: This semiconductor manufacturing method comprises a process for supplying chemical containing sulfuric acid and oxygenated water, a process for mixing the supplied chemical, a process for controlling the temperature of the mixed chemical to a preliminarily set temperature range, a process for introducing the temperature-controlled chemical to the treatment tank, and a process for immersing a semiconductor wafer in the chemical introduced to the treatment tank and for carrying out the peeling treatment of a treated film formed on the semiconductor wafer. COPYRIGHT: (C)2006,JPO&NCIPI
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