Device for cleaning cvd device and method of cleaning cvd device

摘要

An apparatus for cleaning a CVD apparatus that can efficiently remove a by-product such as SiO₂ or Si₃N₄ stuck and deposited onto the surface of an internal wall, an electrode, or the like in a reaction chamber in a film forming process, and a method for cleaning a CVD apparatus. A control monitors luminous intensity data of an F radical in a reaction chamber by optical emission spectroscopy and compares the data with calibrated prestored luminous intensity data, and ends cleaning after a predetermined time passes from reaching a luminous intensity saturation point. Furthermore, concentration data of SiF₄ in a gas discharged from the reaction chamber are monitored by a Fourier transform infrared spectrometry and compared with prestored concentration data of SiF₄ to decide that the predetermined time has passed when a predetermined cleaning end point concentration is reached, thereby ending the cleaning.