Ion recombination zone producing method for e.g. silicon wafer, involves accomplishing diffusion processes to store heavy metal in space agglomerate, and producing zone of increased ion recombination in body zone of power transistor

摘要

The method involves producing space agglomerates within a semiconductor body (2) e.g. silicon wafer, of a power transistor, while the wafer is irradiated with silicon ions or helium ions. Diffusion processes are accomplished in order to store heavy metal e.g. gold, in the agglomerate. The zone of increased ion recombination is produced in a body zone of the power transistor.