| 摘要 |
A high-performance CMOS field effect semiconductor device using metal gate electrodes. An n-type gate electrode and a p-type gate electrode are formed by using a same metal and differ in nitrogen concentration. As a result, a high-performance CMOS field effect semiconductor device having the n-type gate electrode and the p-type gate electrode between which a work function difference is a predetermined value can be realized. By forming a low-resistance layer on layers which are formed by using the same metal and which differ in nitrogen concentration, it is possible to reduce the resistance of the n-type gate electrode and the p-type gate electrode while controlling the work functions of the n-type gate electrode and the p-type gate electrode. Therefore, a higher-performance CMOS field effect semiconductor device can be realized.
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