| 摘要 |
PROBLEM TO BE SOLVED: To reduce dispersion of a semiconductor film's crystalline state when heating multiple substrates using a heater, on which an amorphous semiconductor film is formed, as well as extending the heater's life as long as possible. SOLUTION: A heating arrangement 50 heats multiple substrates 20 with an amorphous semiconductor film 20 formed on them. The arrangement has: a treatment room 10 where the multiple substrates 20 are housed; multiple heaters 30 that heat respective substrates housed inside the treatment room 10; a heat transfer 40 that radiates radiant heat to each substrate 20 by being heated by the multiple heaters 30; a first controller 60a that controls the heat release value of each heater 30 so that the temperature of each substrate 20 may fall within a specified temperature range; and a second controller 60b that nullifies at least one of the heat release values of the respective heaters 30 controlled by the first controller 60a by the end of heating the substrates 20, after a specific time has elapsed from the heating start time of the substrates 20. COPYRIGHT: (C)2006,JPO&NCIPI |
