| 摘要 |
PROBLEM TO BE SOLVED: To provide a growing method of ZnO-based compound crystal for restraining an increase in costs, and decreasing the concentration of residual electrons by reducing the oxygen defect of the ZnO-based compound crystal. SOLUTION: The method has a growth process for supplying first raw material gas containing a raw material containing a zinc atom and a transportation gas, and a second raw material gas containing an oxygen atom into a reactor 2 in which a substrate 3 is stored; and for performing epitaxial growth to the ZnO-based compound crystal on the substrate 3 by allowing the zinc atom to react with the oxygen one. In this case, the oxygen atom is supplied much more than the zinc atom, and the growth speed of the ZnO-based compound crystal is set to 3 [nm/hour] or higher and 300 [nm/hour] or lower. COPYRIGHT: (C)2006,JPO&NCIPI
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