发明名称 MEMBRANE STRUCTURE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a membrane structure controllable freely so that the shape of the membrane is a desired shape, and its manufacturing method. SOLUTION: A silicon oxide membrane made of TEOS with a CVD method and thin membrane 13 made of NSG are formed on one surface of a substrate 11, and a space 12 is formed from the other surface side of the substrate 11 by etching so as to remain the thin membrane 13. The substrate 11 having the thin membrane 13 and the space 12 is stored in a furnace, the temperature is set within 700°C - 1000°C according to a required deflection amount, and heat treatment is performed. The denseness is improved by heat treatment after deposition, and the residual stress after the heat treatment can be fixed to either tensile stress or compressive stress. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006250701(A) 申请公布日期 2006.09.21
申请号 JP20050067487 申请日期 2005.03.10
申请人 TOKYO ELECTRON LTD;OKUTEKKU:KK 发明人 ONO KATSUYUKI;HARADA MUNEO;OKUMURA KATSUYA
分类号 G01N33/53;G01N37/00 主分类号 G01N33/53
代理机构 代理人
主权项
地址