发明名称 BRAZING FILLER METAL, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME, AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a brazing filler metal which does not contain Pb, yields a junction unmeltable in spite of heating to 26°C, is excellent in wettability and is low in cost. SOLUTION: The brazing filler metal which contains 2 to 5mass% Ag, and 1 to 20mass% Co, and the balance Sn and inevitable impurities is provided. Further, the brazing filler metal preferably contains 0.001 to 0.5mass% P, or 0.01 to 5mass% in total one or more of Sb, Cu, Fe and Ni. The brazing filler metal is satisfactory in wettability in die bonding a semiconductor element to a lead frame and does not remelt in spite of heating up to 260°C which is the heating temperature in the case of packaging the assembled semiconductor device to a printed circuit board. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006247690(A) 申请公布日期 2006.09.21
申请号 JP20050066846 申请日期 2005.03.10
申请人 SUMITOMO METAL MINING CO LTD 发明人 MORI NOBUMIKI;YAMAZAKI SABURO
分类号 B23K35/26;C22C13/00;C22C13/02;H01L21/52 主分类号 B23K35/26
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