发明名称 |
Nitride semiconductor LED improved in lighting efficiency and fabrication method thereof |
摘要 |
A nitride semiconductor LED improved in lighting efficiency and a fabrication method thereof, in which an n-doped semiconductor layer is formed on a substrate. An active layer is formed on the n-doped semiconductor layer to expose at least a partial area of the n-doped semiconductor layer. A p-doped semiconductor layer is formed on the active layer. A p+-doped semiconductor layer is formed on the p-doped semiconductor layer. An n+-doped semiconductor layer is formed in at least a partial upper region of the p+-doped semiconductor layer via n-dopant ion implantation. The n+-doped semiconductor layer cooperates with an underlying partial region of the p+-doped semiconductor layer to realize a reverse bias tunneling junction. Also, an upper n-doped semiconductor layer is formed on the n+-doped semiconductor layer to realize lateral current spreading. The invention can improve lighting efficiency by using the reverse bias tunneling junction and/or the lateral current spreading.
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申请公布号 |
US2006208264(A1) |
申请公布日期 |
2006.09.21 |
申请号 |
US20060439127 |
申请日期 |
2006.05.24 |
申请人 |
RYU YUNG H;YANG KEE J;OH BANG W;PARK JIN S;KIM YOUNG H |
发明人 |
RYU YUNG H.;YANG KEE J.;OH BANG W.;PARK JIN S.;KIM YOUNG H. |
分类号 |
H01L21/00;H01L27/15;H01L29/167;H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119;H01L31/12;H01L33/06;H01L33/12;H01L33/32;H01L33/42 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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地址 |
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