| 摘要 |
<p>Disclosed are a durable organic thin-film transistor and a method for manufacturing such an organic thin-film transistor. Specifically disclosed is an organic thin-film transistor comprising a source electrode and a drain electrode arranged apart from each other, an organic semiconductor layer interposed between the source electrode and the drain electrode, and a gate electrode arranged opposite to the organic semiconductor layer between the source electrode and the drain electrode via a gate insulating film. The gate insulating film is composed of an organic compound and inorganic compound particles dispersed in the organic compound, and a planarization film is arranged between the source electrode and the drain electrode, or between the gate electrode and the gate insulating film.</p> |
