PACKAGED RF POWER TRANSISTOR HAVING RF BYPASSING/OUTPUT MATCHING NETWORK

摘要

The linearity of a wideband RF power transistor amplifier is improved by including output matching circuit and an integrated bias/RF diplexer with RF and video bypassing capacitor network within the transistor package and connected directly to the transistor. By placing the RF and video bypass power supply circuitry within the package and close to the transistor, the input impedance resonance can be increased from approximately 50 MHz to over 125 MHz, thereby reducing AM/PM distortion in the output signal.