发明名称 Low voltage ESD protection circuit
摘要 <p>The protective circuit has a first field effect transistor (42) which has a first drain, a first source and a first control terminal. The circuit also has an input network (40). This changes the voltage between the first control terminal and the first source by means of a voltage applied between the first drain and the first source. The input network has a second field effect transistor complementary to the first. The drain of the first FET is connected to the source of the second and is also connected via a resistor to the base of the second FET. The drain of the second FET is connected to the base of the first and, via a resistor, to the source of the first.</p>
申请公布号 EP1703559(A1) 申请公布日期 2006.09.20
申请号 EP20060004793 申请日期 2006.03.09
申请人 ATMEL GERMANY GMBH 发明人 GROMBACH, PETER, DIPL.-ING.;KLAUSSNER, MANFRED, DIPL.-ING.
分类号 H01L27/02;H01L23/60;H02H9/04;H03K17/082;H03K17/30 主分类号 H01L27/02
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