Method for reducing pattern dimension in a photoresist layer

摘要

The invention discloses improvements in the so-called coated thermal flow process for reducing the pattern dimension of a patterned resist layer on a substrate to accomplish increased fineness of resist patterning, in which a coating layer of a water-soluble resin formed on the patterned resist layer is heat-treated to effect thermal shrinkage of the coating layer with simultaneous reduction of the pattern dimension followed by removal of the coating layer by washing with water. The improvement of the process is obtained by using an aqueous coating solution admixed with a water-soluble amine compound such as triethanolamine in addition to a water-soluble resin such as a polyacrylic acid-based polymer. Further improvements can be obtained by selecting the water-soluble resin from specific copolymers including copolymers of (meth)acrylic acid and a nitrogen-containing monomer such as N-vinylpyrrolidone, N-vinylimidazolidinone and N-acryl-oylmorpholine as well as copolymers of N-vinylpyrrolidone and N-vinylimidazolidinone in a specified copolymerization ratio.